Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices

Importancia y uso:

5.1 Many modern integrated circuits, power transistors, and other devices experience SEP when exposed to cosmic rays in interplanetary space, in satellite orbits, or during a short passage through trapped radiation belts. It is essential to be able to predict the SEP rate for a specific environment in order to establish proper techniques to counter the effects of such upsets in proposed systems. As the technology moves toward higher density ICs, the problem is likely to become even more acute.

5.2 This guide is intended to assist experimenters in performing ground tests to yield data enabling SEP predictions to be made.

Subcomité:

E10.07

Volúmen:

12.02

Número ICS:

31.080.01 (Semi-conductor devices in general)

Palabras clave:

SEB; SEE; SEFI; SEGR; SEL; SEP; SEP cross section; SEU; single event; single event effect; single event phenomena; single event upset; space environment;