Standard Guide for Neutron Irradiation of Unbiased Electronic Components

Importancia y uso:

5.1 Semiconductor devices can be permanently damaged by neutrons (1, 2).6 The effect of such damage on the performance of an electronic component can be determined by measuring the component’s electrical characteristics before and after exposure to fast neutrons in the neutron fluence range of interest. The resulting data can be utilized in the design of electronic circuits that are tolerant of the degradation exhibited by that component.

5.2 This guide provides a method by which the exposure of silicon and gallium arsenide semiconductor devices to neutron irradiation may be performed in a manner that is repeatable and which will allow comparison to be made of data taken at different facilities.

5.3 For semiconductors other than silicon and gallium arsenide, applicable validated 1-MeV damage functions are not currently available in codified national standards. In the absence of a validated 1-MeV damage function, the non-ionizing energy loss (NIEL), see Practice E3084, or the displacement kerma, as a function of incident neutron energy, normalized to the response in the 1-MeV energy region, may be used as an approximation. See Practice E722 for a description of the method used to determine the damage functions in Si and GaAs (3).

Subcomité:

E10.07

Referida por:

E2450-23, E1854-19

Volúmen:

12.02

Número ICS:

31.020 (Electronic components in general), 31.080.01 (Semi-conductor devices in general)

Palabras clave:

dosimetry; electronic component; equivalent monoenergetic neutron fluence; fast burst reactor (FBR); gallium arsenide; gamma dose; gamma effects; irradiation; neutron fluence; neutron flux; nickel; 1 MeV equivalent fluence; radiation; reactor; semiconductor; silicon; sulfur; thermoluminescent dosimeter (TLD); TRIGA-type reactor;